Core Role of the Sprinkler in Vacuum Coating
1. Gas Uniform Distribution and Process Stability
o Function: The showerhead delivers reactive gases (such as SiH₄, Ti(OEt)₄) uniformly to the wafer surface through a micro - hole array (with a pore diameter range of 50–500μm and a distribution density of 10⁴–10⁶ holes/cm²), ensuring a film thickness deviation of ≤±1% (for a 300mm wafer).
o Case: In Atomic Layer Deposition (ALD), the showerhead achieves single - atomic - layer precision deposition (0.1nm/cycle) of the HfO₂ high - k dielectric layer through pulsed gas supply, reducing the leakage current density to 10⁻⁸ A/cm² (Intel 10nm process).
o Process stability: Optimizing the showerhead design can prevent gas turbulence and particle contamination, and improve step coverage (e.g., the coverage rate of metal deposition on the sidewalls of FinFETs is ≥98%). If the design is poor, the film thickness deviation may exceed 5%, leading to a 30% decrease in yield (based on TSMC process data).
2. Key Technical Parameters
o Pore Size and Distribution: Directly impact gas flow rate and uniformity. A pore size that is too small (<50μm) results in insufficient flow rate, while a pore size that is too large (>500μm) causes turbulence.
o Material Corrosion Resistance: Must withstand corrosive gases such as HCl and HF to prevent particle contamination caused by the peeling off of Al₂O₃ coatings.
o emperature Control: At high temperatures (≥600℃), it is necessary to prevent gas thermal decomposition (e.g., SiH₄ decomposes into Si and H₂ at 800℃).
o Vacuum Compatibility: The leakage rate needs to be ≤10⁻⁹ Torr·L/s to avoid excessive oxygen content leading to metal oxidation.
Case
· Intel 10nm Process: A dual - showerhead design enables Atomic Layer Deposition (ALD) of HfO₂/TiN gate stacks, reducing leakage current by 40% (reported in IEEE Transactions on Electron Devices, 2020).
· TSMC 3D NAND: The pore size of the showerhead is optimized to 50μm to ensure the uniformity of Al₂O₃ isolation layers in deep trench structures (presented at VLSI Technology Symposium, 2021).
Future Trends of Showerhead Technology
1. Intelligent Control
o Function: Integrating pressure sensors and flow control valves to compensate for gas flow rate fluctuations in real time through CFD (Computational Fluid Dynamics) simulations.
o Case: The AMAT Endura platform enhances film uniformity by 30% through closed - loop control (reported in Solid State Technology, 2022).
1. Miniaturization Design
o Demand: Reducing the pore size to below 20μm to adapt to 3nm node processes after EUV lithography.
o Challenge: The need to address micro - hole clogging (particle size > 10μm) and cleaning difficulties.
1. Material Innovation
o Direction: Using silicon carbide (SiC) - based composite materials to improve high - temperature resistance (≥1000℃) and corrosion resistance.
o Advantage: Prolonging the service life by 50% and reducing downtime for maintenance (based on internal testing data from Lam Research).
The Association Between Showerheads and Semiconductor Equipment Manufacturers
Conclusion
The showerhead, as the "heart" of the vacuum coating process, directly determines film quality, process yield, and equipment stability through its design:
· Technical Value: By optimizing the showerhead, film uniformity can be improved from ±5% to ±1%, and the process defect rate can be reduced (e.g., particle density can be lowered from 10⁶/cm² to 10⁴/cm²).
· Industry Case: The AMAT Endura platform achieves atomic - level deposition of FinFET metal gates through showerhead innovation, reducing leakage current density to 10⁻⁹ A/cm² (reported in IEDM, 2021).
Recommended Actions:
Process Development: For complex structures like 3D NAND, it is necessary to customize the pore size and distribution density of the showerhead (e.g., pore size gradient design).
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